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Magazine Name : Ieee Transactions On Nanotechnology
Year : 2002Volume number : 01Issue:04
Single Electron Transistor Basd On Gate -Induced Si Island For Single Electron Logic Application(Article) Subject:
Electron Beam Application
Author:
A
Kim
page:
170
-
175
Subsurface Dopant Induced Features On The Si(100) Fundamental Study Aned Application(Article) Subject:
Fundamental Algorithms
Author:
Ye
Lin
page:
176
-
183
Carbon Nanotube Electronics(Article) Subject:
Carbon
Author:
J.
Appenzeller
page:
184
-
189
Intrinsic Fluctuation In Sub 10-Nm Double Gate Mosfet Introduced By Distcrete Of Vcharge And Matter(Article) Subject:
Charge Asymmetric Resonance Tunneling (Cart)
Author:
G.J.
Brown
page:
195
-
200
A System Architecture Solution For Unreliable Nanoelectronic Devices(Article) Subject:
Devices
Author:
Zhiyu
Han
page:
201
-
208
Nanocomputing By Field -Couplked Nanomagnets(Article) Subject:
Nakagami Fading
Author:
G.
Csaba
page:
209
-
213
Efects Of Oxidation Process(Article) Subject:
Effect If Feed Retardation
Author:
A
Saith
page:
214
-
218
Ac And Ddc Characteristic Sof Sub -50 Modsfet(Article) Subject:
Mosfet
Author:
J H
Lee
page:
219
-
225
A Practical Spice Model Based On The Physic And Characteristics Of Realistic Single-Electron Transistors(Article) Subject:
Spice Model
Author:
J H
Lee
page:
226
-
232
Electrical Characteristics Of Finfet With Vertically Non Uniform(Article) Subject:
Verification
Author:
S. L-Y.
Woo
page:
233
-
237
Modeling Of Quantum Effects Of Ultrathin Oxide Mos Stsructure With An Effective Potewntial(Article) Subject:
Potential Advantages
Author:
D C
Tang
page:
238
-
242
A Spice Compatible Model To 10 Of Nm By Decoupling Of Storage(Article) Subject:
Potential Advantages
Author:
D C
Tang
page:
243
-
246
Scaling Of Flash Nvram To 10 Of Nm By Decoupling Of Storage From Read/Sense Using Back Floating Gates(Article) Subject:
Tangential Loading Of General
Author:
V
Kumar
page:
247
-
254
Ballistic Fet Modeling Using Qdame: Quantum Devicesanalysis By Modal Evaluation(Article) Subject:
Evaluate
Author:
Toth
L
page:
255
-
259
Breakdown Of Universal Mobility Curves In Sub-100 Nm Mosfets(Article) Subject:
Universal Constant Gm Circuit
Author:
Abidin
Kaya
page:
260
-
263