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Magazine Name : Ieee Transactions On Nanotechnology

Year : 2002 Volume number : 01 Issue: 04

Single Electron Transistor Basd On Gate -Induced Si Island For Single Electron Logic Application (Article)
Subject: Electron Beam Application
Author: A Kim     
page:      170 - 175
Subsurface Dopant Induced Features On The Si(100) Fundamental Study Aned Application (Article)
Subject: Fundamental Algorithms
Author: Ye Lin     
page:      176 - 183
Carbon Nanotube Electronics (Article)
Subject: Carbon
Author: J. Appenzeller     
page:      184 - 189
Intrinsic Fluctuation In Sub 10-Nm Double Gate Mosfet Introduced By Distcrete Of Vcharge And Matter (Article)
Subject: Charge Asymmetric Resonance Tunneling (Cart)
Author: G.J. Brown     
page:      195 - 200
A System Architecture Solution For Unreliable Nanoelectronic Devices (Article)
Subject: Devices
Author: Zhiyu Han     
page:      201 - 208
Nanocomputing By Field -Couplked Nanomagnets (Article)
Subject: Nakagami Fading
Author: G. Csaba     
page:      209 - 213
Efects Of Oxidation Process (Article)
Subject: Effect If Feed Retardation
Author: A Saith     
page:      214 - 218
Ac And Ddc Characteristic Sof Sub -50 Modsfet (Article)
Subject: Mosfet
Author: J H Lee     
page:      219 - 225
A Practical Spice Model Based On The Physic And Characteristics Of Realistic Single-Electron Transistors (Article)
Subject: Spice Model
Author: J H Lee     
page:      226 - 232
Electrical Characteristics Of Finfet With Vertically Non Uniform (Article)
Subject: Verification
Author: S. L-Y. Woo     
page:      233 - 237
Modeling Of Quantum Effects Of Ultrathin Oxide Mos Stsructure With An Effective Potewntial (Article)
Subject: Potential Advantages
Author: D C Tang     
page:      238 - 242
A Spice Compatible Model To 10 Of Nm By Decoupling Of Storage (Article)
Subject: Potential Advantages
Author: D C Tang     
page:      243 - 246
Scaling Of Flash Nvram To 10 Of Nm By Decoupling Of Storage From Read/Sense Using Back Floating Gates (Article)
Subject: Tangential Loading Of General
Author: V Kumar     
page:      247 - 254
Ballistic Fet Modeling Using Qdame: Quantum Devicesanalysis By Modal Evaluation (Article)
Subject: Evaluate
Author: Toth L     
page:      255 - 259
Breakdown Of Universal Mobility Curves In Sub-100 Nm Mosfets (Article)
Subject: Universal Constant Gm Circuit
Author: Abidin Kaya     
page:      260 - 263